| 摘要 |
PURPOSE:To obtain a semiconductor device having a flat surface and a small capacity between a source and a drain, by forming similarly the thickness of masks formed on source and drawing regions and channel regions disposed therebetween when forming the source and drain regions on the surface layer of a semiconductor substrate and the channel region disposed between the source and drain regions. CONSTITUTION:An n<-> type semiconductor layer 2 is accumulated on an n<+> type semicon ductor substrate 1, p<+> type semiconductor layers 3 are diffused in both end sides, and the entire surface which includes the layer 3 is coated with an oxide film 5a to become a gate insulating film, and p-type impurity ions 4a are implanted therethrough. Then, a gate electrode polycrystalline Si film 6 is formed on the portion disposed between the layers 3 of the film 5a, an oxidation resistance insulating film 11 is coated on the film 6, windows are opened at the films, and n-type impurity ions 12a are implanted. Thereafter, the ions 12a are additionally diffused by heat treating to form an n-type semiconductor layer 12n, the windows of the films 6, 11 used for masks are blocked by a thick oxide film 5d1. Then, an oxide film 5d2 of the same thickness as the film 5d1 is formed on the layer 3, with the film 5d2 as a mask n<+> type source region 8 is diffused in the layer 3. |
