| 摘要 |
PURPOSE:To measure a voltage/current characteristic of a semiconductor element without any rise in temperature by measuring the voltage/current characteristic using a pulse. CONSTITUTION:The gate 4 of an insulating gate type FET1 as a semiconductor element to be measured in controlled by the same charging voltage with a power source 8 for a capacitor 5 which is charged by a DC power source 8, etc., and a negative pulse is applied to the source 3 from a grounded pulse power source 9 through a diode 10 which prevents unnecessary pulse reflection at the power source. Then, the current flowing through the source 3 and source 2 is measured as a voltage through a resistance 11 between the drain and ground. Heat generation is almost eliminated by the use of a short pulse in this large-voltage and large-current state, and the destruction, etc. due to a rise in temperature is not caused to measure excellently the voltage/current characteristic of the semiconductor element without any temperature rise.
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