| 摘要 |
PURPOSE:To improve the reliability of an IC and an LSI by covering an electrode formed on a substrate with an insulating film, etching it, and forming wirings connected to the electrode, thereby forming electrode wirings which are not disconnected with high reliability. CONSTITUTION:An SiO2 film 10 is formed on a substrate 1, an electrode window is formed, an aluminum film 11 is covered, patterned, and an SiO2 film 12 is covered. An ion etching is achieved from the sidewise direction of the substrate surface as a flat SiO2 film 12 surface, a dry etching is performed from above to expose the electrode 11. An aluminum film 14 is covered, and patterned to form electrode wirings made of aluminum wirings 14 connected to the electrode 11. |
