| 摘要 |
PURPOSE:To prevent the occurrence of a hillock by forming a thin film of a material which contains Al, Mo, W or Ti, etc., on a structure, introducing an impurity into the film by physical means and then heat treating the film. CONSTITUTION:Aluminum as a wiring material is formed in the prescribed thickness by a known thin film forming method. Then, ions of Ar, As or B are implanted to the film. The ion implanting conditions preferably include 60keV of acceleration, 1X10<16> does of implantation amount per unit area. The ion concentration (particularly within 2,000Angstrom from the surface) in the vicinity of the surface is preferably 5X10<17> ions/cm<3> or higher. Then, the film is etched by a photolithographic technique to form the prescribed wiring pattern. Subsequently, it is heat treated. |
