| 摘要 |
PURPOSE:To make it possible to perform sufficiently strong bonding, by taking each electrode from a detection element through vapor deposition by adhering an infrared element and a support table so as to make the upper surface of said element same to the flat surface of said support table while leading out a bonding wire from the strong support table. CONSTITUTION:An oxide film 213 is formed to the surface of a silicon substrate having a hole 211 formed thereto and a bonding electrode 214 is formed thereon. A relatively thick detection element 22 with a back surface electrode 221 is adhered to the step part 212 of a support table 21 with an insulating adhesive 23 and a conductive adhesive 24. In the next step, the infrared detection element 22 is polished until the upper surface thereof becomes blush with the flat surface of the support table 21 and an infrared ray absorbing electrode 222 and a signal take-out electrode 223 are vapor deposited onto the element 22 while a bonding wire 224 is taken out from the bonding electrode 214 on the support table 21 and the electrode 221 is led out through the electrode terminal 24 on the support table by a bonding wire 226. Therefore, sufficiently strong bonding can be performed. |
