Read only memory.

摘要

Data is read out from memory cells (M11 - Mmn) in which "0" level and "1" level binary data have been stored, and a signal potential responsive to the readout data is compared with a comparison potential (VD) by a sense amplifier (SA), thereby sensing the data. In a comparison potential generator (20), the above comparison potential (VD) is set to have the intermediate potential between a potential (VBc) obtained by a dummy cell (Mc) in which the "1" level data has been stored, and a potential (VBd) obtained by a dummy cell (Md) in which the "0" level data has been stored.