| 摘要 |
PURPOSE:To prevent foreign matter which sticks to a reticle from being transferred onto a wafer by providing a translucent metal vapor-deposited film at a mask pattern formation area part and decreasing light transmittivity to its exposure light beam. CONSTITUTION:A mask pattern 2 is formed on the surface of a glass substrate 1 by, for example, Cr vapor deposition and etching. The translucent vapor- deposited film 3 formed by vapor-depositing, for example, Cr, Al, or Cu in the formation area part A of the mask pattern 2 is much thinner than the mask pattern 2, and this film is formed on the mask pattern 2 or the opposite surface of a reticle glass substrate 1 where the mask pattern 2 is formed. Consequently, the light transmittivity of the mask pattern formation part A is decreased by selecting the film thickness of the vapor-deposited film 3 properly, and consequently an exposure time for obtaining the proper mask pattern is made longer than when this vapor-deposited film 3 is not formed, so foreign matter sticking onto the reticle glass substrate 1 is absorbed completely within the light transmittivity of the vapor-deposited film 3. |
