| 摘要 |
A homogeneous silicate glass layer is prepd. on semiconducting wafers. The apparatus is composed of a sealed tube (1) made from quartz or stainless steel, an inlet (4) and outlet (5) of reactive gas, a pressure gauge (8), and a vacuum pump (6) that moves reactive gas to deposit the silicate glass on the semiconducting wafers (2). The wafers are arranged vertically or on the slant at regular intervals. The reactive gas is moved around them by a vacuum pump and they are thus doped uniformly.
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