发明名称 |
Tungsten barrier contact |
摘要 |
A semiconductor contact has a thin barrier layer less than 500 angstroms in thickness of a metal such as tungsten applied between an aluminum contact layer and a metal-semiconductor compound. The metal semiconductor compound forms a junction with an underlying semiconductor substrate. The thin barrier prevents a chemical reaction between the aluminum of the contact layer and the metal of the metal-semiconductor compound.
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申请公布号 |
US4478881(A) |
申请公布日期 |
1984.10.23 |
申请号 |
US19810334561 |
申请日期 |
1981.12.28 |
申请人 |
SOLID STATE DEVICES, INC. |
发明人 |
BARTUR, MEIR;NICOLET, MARC |
分类号 |
H01L29/872;H01L21/285;H01L29/45;H01L29/47;(IPC1-7):H01L21/28 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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