| 摘要 |
PURPOSE:To enable to perform the measurement ranging from low pressure to high pressure by using the same resistance pattern in the titled pressure sensor and to contrive to upgrade the productivity and the reliability of the sensor by a method wherein thin parts corresponding to each piezoresistance element on the silicon disphragm are formed and other thick parts are fixed on a supporting material. CONSTITUTION:Four circular recessed parts 62 are provided in a silicon diaphragm 61 formed by a silicon single crystal, and this parts 63 and thick parts 64 are formed in the diaphragm 61. A supporting stand 64, whose thermal expansion coefficient is nearly equal to that of silicon, is airtightly adhered to the lower surfaces of the thick parts 64, while piezoresistance elements 66 and 67 are respectively formed by 1 to 1 in the vicinities along the circumferences of the thin parts 63 and the elements 66 and 67 are connected in a bridge form. As a result, by using the same resistance pattern on the diaphragm 61, the measurement ranging from low pressure to high pressure is made possible and the upgrade of productivity and reliability of the titled pressure sensor is contrived. |
