| 摘要 |
PURPOSE:To enable to obtain the high-speed semiconductor device of excellent stability by a method wherein a semiconductor region of the type same as that of a base is provided adjoining to the lead-out electrode part of the base. CONSTITUTION:Epitaxial layers 13 and 15 having the same impurities as a substrate 11, which will be turned to an n type single crystal collector region, are formed on an n type Si substrate 11. Also, an epitaxial film 18 having heterogenous p type impurities, whereon a single crystal base region will be formed, and an epitaxial film 20 having n type high density impurities, whereon a single crystal emitter region will be formed, are formed in succession. Besides, two polycrystalline Si films, one is a polycrystalline Si film 17 which is formed together with the film 15 and the other is a polycrystalline Si film 19 which is formed together with the film 18 are formed into a base lead-out electrode. Said base electrode is constructed in such a manner that the base is connected to the external circuit using the polycrystalline Si film 22 which is formed together with an epitaxial film 20 whereon an emitter will be formed. By constituting the diode as above-mentioned, the impurities in the base can be maintained in the state of the doped impurity distribution when an epitaxial film was formed, thereby enabling to obtain high-speed and excellently stabilized characteristics. |
