| 摘要 |
PURPOSE:To form a deep field region having no thermal distortion by covering the active region on the surface of semiconductor substrate with Si3N4 or a multilayer film including Si3N4, providing a lattice or striped groove to the field region surrounding such active region, exposing the substrate to this side surface, and filling the groove with an insulating material formed at the exposed surface by the heat treatment. CONSTITUTION:The laminated SiO2 film 22 and Si3N4 film 23 are deposited on the entire part of Si substrate 21 and a plurality of lattice or striped grooves 26 which enter the substrate 21 are formed in the form of rings by the reactive ion etching to the field region 25, except for the active region 24 where transistors, etc. are formed. With the wall surface of groove 26 formed vertically by the etching, the substrate 21 is exposed here, an oxide film 27 is formed from both side surfaces of groove 26 by the heat treatment, and thereby the groove 26 is perfectly filled. Thereafter, the films 23 and 22 are removed and a deep field oxide film 27 surrounding the region 24 is formed. |
