| 摘要 |
PURPOSE:To contrive reduction in cost of formation of layers and simplification of manufacturing process by a method wherein a buried normally-OFF type MOSFET is used as a vertical type MOSFET, thereby enabling to reduce the thickness of an epitaxially grown layer. CONSTITUTION:The MOSFET for power is composed of a drain 21 consisting of an N<+> type Si substrate, an N<+> type source region 23 formed within the epitaxial layer 22 grown on said substrate, a gate electrode 26 arranged on the surface of the region 23 in such a manner that it is surrounding the region 23 through the intermediary of an Si oxide film 24, and a P<+> type buried region 25 provided facing the electrode 26. According to this constitution, the region 25 has the conductive type reverse to that of the substrate and that the region 25 will be brought to equipotential form. When the titled semiconductor device is constituted as above, the layer 22 can be reduced remarkably in thickness and the process of manufacture can also be simplified, thereby enabling to cut down the cost of production. |
