| 摘要 |
A semiconductor memory device includes at least, a memory cell including a first Schottky diode therein, a word line, a bit line, a first constant-current circuit for the word line, a second constant-current circuit for the bit line, and a bias circuit for biasing the first and second constant-current circuits. The bias circuit contains therein a second Schottky barrier diode. A forward voltage VF of the second Schottky barrier diode is substantially the same as that of the first Schottky barrier diode.
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