| 摘要 |
PURPOSE:To enable to accomplish a high speed and high density semiconductor device by a method wherein each semiconductor layer is continuously formed on a semiconductor substrate by performing a molecular beam epitaxial method. CONSTITUTION:A B<+>-doped P type base layer 15, an As-doped N type emitter layer 16, and a polycrystalline Si layer or an amorphous Si are grown on the P type semiconductor substrate 11, whereon an N<+> type buried layer 12, a P type channel-stopper 13 and an N-type collector layer 14 are formed, by performing a molecular beam epitaxial method. According to this process, as works are continuously performed in a vacuum atmosphere, no natural oxide film is generated on the interface located between the layer 16 and the layer 17. Also, the layer 15 can be formed thin in thickness by utilizing the molecular beam epitaxial method. Also, the layer 16 of high density can be uniformly grown. As said layers 15 and 16 are grown independently, the compensating effect of donor and acceptor in emitter does not generate at all, thereby enabling to form a thin emitter junction and a base junction in an excellent manner and to contrive formation of a high-speed transistor.
|
