| 摘要 |
PURPOSE:To obtain the monolithic microscopic integrated circuit of uniform characteristics by a method wherein the FET part of which is divided into two parts, and one of which is used as a variable capacitor. CONSTITUTION:Gate fingers A(10A) and B(10B) are tied up in bundles of gate electrodes A(13A) and B(13B) respectively, and a bias circuit 17 for fine adjustment is connected to the electrode B(13B). Now, when the prescribed positive voltage is applied to a drain electrode 12 and when a voltage a little lower than said positive voltage is applied to the circuit 17, a capacitance is generated between the electrode B(13B), the electrode 12 and the source electrode B(11B) by having Schottky junction. Also, capacity is given in parallel to the FET which is formed by the finger A(10A), the electrode 12 and a source 11A. Accordingly, the irregularity of characteristics of the FET can be corrected by changing the voltage applied to the circuit 17, thereby enabling to adjust and make uniform the amplification characteristics. |
