| 摘要 |
PURPOSE:To protect an aluminum wiring film from corrosion caused by plasma after dry-etching by maintaining the temperature of a treated object higher than a prescribed value during the plasma treatment. CONSTITUTION:After a plurality of treated objects 27 are arranged on a lower electrode 23 from an intake 22 of a dry-etching chamber 28, the chamber 28 is exhausted until the pressure becomes low. While reactive gas is supplied, a high frequency voltage is applied between the electrodes 23, 24 and the treated objects 27 are subjected to dry-etching. Then the treated objects 27 are transferred to a transit chamber 30 in order and transferred and loaded 32 by a belt transfer mechanism. When the loading is finished, an opening and closing mechanism 29 is closed and the chamber 28 is cut off and at the same time the loading equipment 32 is transferred into a plasma treatment chamber 40 by the movable belt transfer mechanism. O2 gas, supplied into the chamber 40, is turned into gas plasma by a high frequency power and the surface temperature of the treated objects 27 becomes higher than 200 deg.C and the resist films on the objects 27 are turned into ash and chlorine compound in the resist films is removed.
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