发明名称 SENSE AMPLIFIER CIRCUIT OF SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To decrease the number of transistors (TRs) for precharge of a sense amplifier circuit by using only a P type load TR connected to a power supply voltage to perform precharging. CONSTITUTION:In bringing timing signal lines L'3, L'4 and L'5 without any output of information to data lines L'1, L'2, N type TRs Q'1, Q'2 and Q'5 are turned off and the P type TRQ11 is turned on. Then, the P type TRs Q'6, Q'7 for load whose sources are connected to the power supply voltage are turned on and sense output lines L'6, L'7 are precharged in response to the threshold value of the TRs Q'6, Q'7. Thus, the precharge using two P type load TRs is attained, the number of TRs for precharge of the sense amplifier circuit is reduced and the pattern area is reduced.
申请公布号 JPS59186191(A) 申请公布日期 1984.10.22
申请号 JP19830061691 申请日期 1983.04.08
申请人 SUWA SEIKOSHA KK 发明人 TSURUOKA SHIGEO
分类号 G11C11/417;G11C11/34;H01L27/10 主分类号 G11C11/417
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