发明名称 SEMICONDUCTOR DIAFRAME TYPE SENSOR
摘要 The pressure sensor includes a monocrystalline silicon chip defining recesses on a borosilicate glass substrate in a housing with a hollow extension for connection to a point where pressure is to be determined. Holes in the substrate provide communication between the extension and some of the recesses. Above all the recesses are provided pressure-sensitive diaphragms associated with strain gauges in electrical bridges connected by electrodes and leads to terminals. The chip and substrate are materials with similar coefficients of thermal expansion and are bonded by anoic bonding.
申请公布号 KR840001795(B1) 申请公布日期 1984.10.20
申请号 KR19810000846 申请日期 1981.03.16
申请人 HITACHI LTD. 发明人 TANAME MASANORI;SIMATA SATOSHI;NISHIHIRA MOTOHISHA;YAMATA KATSUZI;MATSUOKA YOSHITAKA
分类号 H01L29/84;(IPC1-7):H01L29/84 主分类号 H01L29/84
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