发明名称 |
SEMICONDUCTOR DIAFRAME TYPE SENSOR |
摘要 |
The pressure sensor includes a monocrystalline silicon chip defining recesses on a borosilicate glass substrate in a housing with a hollow extension for connection to a point where pressure is to be determined. Holes in the substrate provide communication between the extension and some of the recesses. Above all the recesses are provided pressure-sensitive diaphragms associated with strain gauges in electrical bridges connected by electrodes and leads to terminals. The chip and substrate are materials with similar coefficients of thermal expansion and are bonded by anoic bonding.
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申请公布号 |
KR840001795(B1) |
申请公布日期 |
1984.10.20 |
申请号 |
KR19810000846 |
申请日期 |
1981.03.16 |
申请人 |
HITACHI LTD. |
发明人 |
TANAME MASANORI;SIMATA SATOSHI;NISHIHIRA MOTOHISHA;YAMATA KATSUZI;MATSUOKA YOSHITAKA |
分类号 |
H01L29/84;(IPC1-7):H01L29/84 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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