ELECTRON BEAM EXPOSURE DEVICE

摘要

PURPOSE:To obtain the device of high accuracy and high productivity for manufacture of very LSI or the like comprising a line width of submicron order by a method wherein plural apertures are formed in an objective aperture and plural aperture lenses are formed in a screen lens in a manner that these lenses correspond to said apertures respectively. CONSTITUTION:Electromagnetic lenses 24 form a crossover image of an electron beam 50 in positions of apertures for blanking 23. The electromagnetic lenses 25 so functions that an electron beam 51 passing through the aperture for blanking 23 becomes a parallel beams and is projected onto an electrostatic-type electron lens 26. In the electrostatic-type electron lens 26, 150 of electronic lenses are formed. The electron beam passing through the electrostatic-type electron lens becomes 150 rays of electron beam 52 which are parallel beams through an electrostatic-type electron lens 27 and said rays are focused on a surface of a wafer 31 and aperture images of beam-shaping apertures 28 are reduced to form a contracted image.