| 摘要 |
<p>PURPOSE:To increase the insulation withstand voltage and obtain the titled device of good heat radiating property and high strength of thermal fatigue resistance by a method wherein a metallic plate whereon a semiconductor element is mounted is adhered on a flat plate of an Si carbide sintered body of low expansion, high thermal conductivity, and insulation property by means of an adhesive of electric insulation property. CONSTITUTION:An insulation substrate should be the flat plate 103 made of an Si carbide sintered body, and a metallic plate 102 is adhered on this flat plate 103 by means of the adhesive 101 of electric insulation property, thus constructing a heat radiating substrate 100. A semiconductor element 202 is adhered on the metallic plate 102 of said substrate 100 by means of solder 203. The adhesive of insulation property is applied to the flat plate 103 of the Si carbide sintered body containing e.g. about 2% of beryllium oxide, and a Cu plate 102 is superposed, which is then left for 16hr in the state of pressure, thereafter obtaining the heat radiating substrate 100 by heating at 150 deg.C. The semiconductor element 202 such as a GTO chip is adhered on this substrate 100 in a furnace of hydrogen atmosphere at 360 deg.C by means of solder 203 such as a solder foil.</p> |
