| 摘要 |
PURPOSE:To enable formation of the epitaxial layer having highly uniform film thickness over all of the plural substrates of arbitrary forms by forming a polycrystalline thin film deposition layer consisting of the same compound as crystal of the substrate on the suscepter for supporting substrates used for vapor growth of a compound semiconductor. CONSTITUTION:A polycrystalline thin film deposition layer 20 consisting of the same compound as crystal of the substrate 16 is formed on a suscepter 17 for supporting substrate crystal used for vapor growth of a compound semiconductor. For example, when placing the GaAs substrate 16 on the suscepter 17 to perform vapor growth of GaAs crystal, a GaAs polycrystalline thin film layer 20 deposited to about 50mum of thickness on the suscepter 17. Consequently, as growing speed of GaAs crystal on the GaAs polycrystalline thin film deposition layer 20 is the same as that on the GaAs substrate 16, there is practically no gap when the substrate is placed on the suscepter. Accordingly, the epitaxial growth layer having a fixed film-thickness distribution constantly irrespective of a shape or an area of the substrate to be placed can be obtained. |
