| 摘要 |
PURPOSE:To eliminate the lower limit of the impressed voltage onto a cell plate electrode by a method wherein the inner surface layer of a groove formed on the main surface of a semiconductor substrate is put in the conductivity type different from that of said substrate, and a capacitor wherein an insulation film and an electrode layer are formed is provided on the inner surface of the groove. CONSTITUTION:A groove is formed by etching an Si substrate 1, and an N type layer 13, the insulation film 14 for the capacitor and an electrode layer 15 are formed. Thus, the capacitor is formed by utilizing the groove, and a conductive layer of the conductivity type different from that of the Si substrate is provided on the surface of said substrate at the capacitor region, therefore the capacitor whose capacitance is large and which unnecessitates the voltage impression on the capacitor electrode can be formed. |
