| 摘要 |
PURPOSE:To enable to produce a clean film, by preventing impurities contaminating a film from being generated from a support base, in a construction of a substrate support base in a device for producing a film on a substrate through a chemical reaction of a gas by using high-frequency heating. CONSTITUTION:In a high-frequency heating film producing device comprising a heating coil 22, a reaction pipe 21 provided with gas-introducing ports 30, 31 and a discharging port 32 and the substrate support base 23 placed in the pipe 21, the pipe 21 is provided with a film producing chamber 28 and a separate chamber 9 isolated from the chamber 28. In the substrate support base 23, a lump of carbon 24 is enclosed in quartz containers 36, 37, 40 provided with an opening at a part thereof, and the opening part 35 is connected to the separate chamber 29 so that a gas in the interior of the container can enter and come out from only the interior of the separate chamber 29 through the opening part 35. Ac- cordingly, impurities contaminating a thin film growing system are prevented from being generated from the support base 23, the material constituting the support base is not easily deteriorated, production is facilitated, and heating characteristics for the substrate can be easily changed. |
