| 摘要 |
PURPOSE:To obtain a resist which has high sensitivity and excellent resistance to dry etching and provides a high resolution by forming a polyamide copolymer consisting of a specific polyamide polymer having a repetitive unit, or a polyamide copolYmer having the repetitive unit originating in the other monomer in addition to said polymer or a mixture composed of such copolymer and other polymer compatible with said copolymer. CONSTITUTION:A titled resist is formed of a polyamide polymer having the repetitive unit expressed by the formula or a polamide copolymer having the repetitive unit originating in the other monomer in addition to the above-mentioned repetitive unit or a mixture composed of said copolymer and other polymer compatible therewith. The group R in the formula is derived from, for example, an unsatd. dicarboxylic acid or the chloride thereof, etc. The polyamide copolymer having the other repetitive unit is obtd. by substituting a part of the divalent acid chloride having double bonds at the side chain with a divalent acid chloride having no double bonds at the side chain or substituting a part of APA with a diamine in addition thereto. R in the formula is at least one divalent org. group. |
