| 摘要 |
PURPOSE:To enable the mass production by realizing high yield and further enable to remove the floating potential of a substrate by forming an active layer on the first semiconductor layer having conductivity via the second semiconductor layer whose forbidden band width is wider than that of the first one. CONSTITUTION:A non-doped (impurity concentration of 1X10<14>cm<-3>) I-Ga0.6Al0.4 As layer 11 is grown to the thickness of 2mum, as a buffer layer, on an N<+> GaAs substrate 10 doped with Si of the concentration of 2X10<18>cm<-3>. Further, as the active layer, an N-GaAs layer 12 doped with Si of the concentration of 1X 10<17>cm<-3> is grown to the thickness of 0.3mum. Next, a source electrode 13 and a drain electrode 14 are formed by vapor-depositing AuGe/Au, and thereafer an Al gate electrode 15 is formed by lift-off method, thus obtaining an MESFET. |
