发明名称 FORMATION OF SEMICONDUCTOR
摘要 PURPOSE:To remove the blur of the window of a reaction cell, and moreover to enable to control a chemical reaction having high selectivity by a method wherein excitation of an oscillation is performed according to infrared laser, and then molecules excited to the oscillation are excited to be dissolved according to ultraviolet laser. CONSTITUTION:SiH4 gas diluted by N2 or Ar gas is introduced in a reaction cell 31 through port openings 36, 37. Then a CO2 laser beam (infrared wavelength variable laser) 35 is introduced in parallel with the surface of an Si wafer 32. When the laser beam is formed in a sheet type using a cylindrical lens, SiH4 molecules in the neighborhood of the surface of the substrate are excited to oscillate. Then by irradiating perpendicularly by a dye laser 34 to the surface of the substrate, only excited SiH4 to the oscillation is dissolved to generate atom type Si, and an a-Si thin film is formed. Because the reaction thereof is generated only in the neighborhood of the surface of the substrate 32, the blur of a window 34 is not generated. Moreover because only the molecules selectively excited according to the oscillation level are dissolved, selectivity of the oscillation is favorable.
申请公布号 JPS59182530(A) 申请公布日期 1984.10.17
申请号 JP19830055062 申请日期 1983.04.01
申请人 HITACHI SEISAKUSHO KK 发明人 MOTOOKA TERUAKI;SHINTANI AKIRA;OKUDAIRA HIDEKAZU
分类号 C23C16/452;C23C16/48;H01L21/205;H01L21/302;H01L21/31 主分类号 C23C16/452
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