| 摘要 |
PURPOSE:To obstruct completely invasion of moisture into an interlayer insulating film, etc. when a first layer wiring is provided on a semiconductor substrate interposing an insulating film between them, and moreover a second layer wiring is formed interposing the interlayer insulating film between them, and the whole surface is to be covered with a finally insulating film by a method wherein the extended parts of the insulating films thereof formed up to this time are covered also with the finally insulating film without left to be exposed, and the under surface of the edge part of the finally insulating film is made to come in contact with the surface of the substrate. CONSTITUTION:A first layer Al wiring 2 having the prescribed shape is formed on an Si substrate 1 interposing an SiO2 film 6 between them, and an interlayer insulating film 4 consisting of SiO2 or PSG, etc. is adhered covering the wiring thereof and coming in contact with the film 6 with the extended part according to the CVD method. Then the prescribed second layer Al wiring 3 is provided thereon, and the wiring thereof is covered with a finally insulating film 5, while at this time, after the extended part of the film 5 is elongated longer than the whole films 4, 6 to cover sufficiently the edge parts thereof, the back of the film 5 is adhered closely to the surface of the substrate 1. Accordingly, invasion of moisture is obstructed, and the generation of inferiority of the Al wirings is avoided. |
