| 摘要 |
PURPOSE:To enable a C-MOSFET utilizing HgCd as material to be manufacutred at high yield by a method wherein an N channel MISFET and a P channel MISFET are element-separated by menas of mesa-etching HgCdTe layer. CONSTITUTION:An N type HgCdTe layer 2 is epitaxially grown on a CdTe substrate 1 to be changed into a P type layer 2a after heat treating the layer 2 at 400-600 deg.C within Hg atmosphere, expelling Hg atoms contained in the layer 2 and producing empty grid points to be acceptors. Next overall surface is coated with an SiO2 protecting film 3 and openings 3a are opened to heat treat the layer 2a in Hg atmosphere at 200 deg.C permeating Hg atoms and restoring the layer 2a in the openings 3a to an N type layers 3b. Through these procedures, the layers 3b are utilized as an N channel type MISFET to utilize P type layers 3c remaining in the layer 2a for a P channel type MISFET. Later, a groove 6 is opened between the two channels and the overall surface including the groove 6 is coated with a ZnS gate insulating film 7a. |
