发明名称 EQUIPMENT FOR VAPOR-PHASE CRYSTAL GROWTH
摘要 PURPOSE:In the vapor-phase crystal growth equipment which is accompanied by volume change in the reactor tube, a means for compensating the volume change is provided to permit the stable growth of epitaxial crystal. CONSTITUTION:The main body of the reactor tube 9, which has two crystal- growing chambers U and D on the upper and lower sides where the base crystal 7 on the holder 6 is shifted from the upper chamber U to the lower one D by the movement of the plate 5, is equipped with the volume change compensator P composed of cylinder 10, bellows 11 and plate 12. As the base holder 6 moves, the plate 5 moves from A through B to C or from C through B to A to cause volume change. But, the volume change compensator P works to move the plate 12 upward or downward to effect accurate compensation of the volume change. Thus, the change in pressure inside the two crystal-growing chambers U and D is inhibited to minimize the composition change of epitaxial crystals caused by back flow of the gas or the like.
申请公布号 JPS59182295(A) 申请公布日期 1984.10.17
申请号 JP19830054119 申请日期 1983.03.30
申请人 NIPPON DENKI KK 发明人 SUZUKI TOORU
分类号 C30B25/08;C30B25/12;H01L21/205 主分类号 C30B25/08
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