| 摘要 |
The invention relates to a photoconducting detector in optical immersion, comprising a detector wafer in Hg1-xCdxTe, on a quartz substrate, and a hemispherical lens in CdTe, assembled on each other by a layer of photosensitive resin whose thickness is calibrated by two shims. The detector is advantageously used for the evaluation of targets. |
