| 摘要 |
PURPOSE:To prevent a semiconductor element from peeling off an insulation substrate by forming the semiconductor element on the insulation substrate with a silicon oxynitride film inbetween. CONSTITUTION:A silicon oxynitride (SiON) film 4 is provided between a quartz substrate 1 and an FET2. The FET2 covered by a tantalum pentaoxide (Ta2O5) film 3 is formed on the SiON film 4. The SiON film does not peel off like an SiO2 film and the surface level density can be relieved compared to the case of applying an SiN4 film. Therefore, a high performance sensor which is durable against severe environmental condition can be realized. |
