| 摘要 |
PURPOSE:To obtain an MIS type device having excellent circuit characteristics by constituting one part of an insulating film by two layers of SiO2 and an Si3N4 film and forming silicide electrodes on source, drain and gate regions while using the two layers as masks when the insulating layer aiming at an insulation among a gate and the source and drain regions is formed on the side surface of a gate electrode. CONSTITUTION:A thick field insulating film 5 is formed to the peripheral section of an N<-> type Si substrate 1, P<+> type source and drain regions 13 are diffused and shaped to the surface layer section of the substrate 1 surrounded by the insulating film 5, and shallow P<-> type regions 12 are formed at the mutually opposite end sections of the source and drain regions. A gate electrode 15 consisting of a silicide is formed on a channel region between the regions 12 through an SiO2 gate insulating film 6 and a polycrystalline Si layer 7, but the gate electrode is shaped while using Si3N4 layers 8 and SiO2 layers 10 formed on the peripheral regions 12 of the substrate as masks. The upper sections of the regions 13 are each coated with a drain electrode 18 and a source electrode 19 consisting of the silicide by similarly using the masks, and Al wirings 17 are connected to the electrodes 18 and 19. |
