发明名称 MELTING OF MICROSCOPIC REGION
摘要 PURPOSE:To obtain a highly accurate smooth surface by providing a groove on an insulation substrate parallel to a melted region and perpendicular to the direction of the advancing of the melted region. CONSTITUTION:A groove 4 is provided to an insulation substrate 1 and an amorphous silicon film 5 is formed on it. When the surface is scanned by an electron beam to the direction of an arrow, the final swollen part drops into the groove 4 and the convex part is eliminated so that an Si crystal film 6 with a smooth surface can be obtained.
申请公布号 JPS59182518(A) 申请公布日期 1984.10.17
申请号 JP19830057224 申请日期 1983.03.31
申请人 FUJITSU KK 发明人 SAKURAI JIYUNJI
分类号 H01L21/20 主分类号 H01L21/20
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