| 摘要 |
PURPOSE:To improve an optical utilization rate, and to automate a manufacturing process by removing the unnecessary sections of each layer in the adjacent space sections of a conversion region by the irradiation of energy beams. CONSTITUTION:A substrate 1 is arranged into a first electrode forming chamber, on the surface thereof a first electrode layer 2 is formed. The substrate 1 is moved into a gas reaction chamber forming a semiconductor layer to the substrate 1 by a gas reaction through a first preparatory chamber to which an evacuating means is related. A second electrode layer 4 is laminated and applied on the semiconductor layer while the unnecessary sections 3', 3' of each layer in the adjacent space sections 6ab, 6bc of a photoelectric conversion region are removed by the irradiation of energy beams. Accordingly, an optical utilization rate is improved while the automation of a manufacturing process is promoted. |
