| 摘要 |
<p>A dynamic type semiconductor memory device is disclosed, which comprises an n-type semiconductor layer (14), at least one memory cell having a capacitor (10) for storing charges of an amount corresponding to a logic value and a first transistor (12) having source and drain regions (18, 20) formed in the surface area of the p-type semiconductor layer and for transferring charges to and from the capacitor (10), a first drive circuit (WL) for applying a voltage to the gate of the first transistor (12) through a word line (WL), a second drive circuit for selectively applying a voltage of one of first and second levels (VS, VC) through a bit line (BL) and the first transistor (12) to the capacitor (10), and a bias circuit for applying a voltage to the substrate (10). The first transistor (12) of the memory device is a p-channel transistor formed in the n-type semiconductor layer (16) which is formed in the surface area of a p-type semiconductor layer (14). The bias circuit includes a charge pump section (41) for setting the potential of the substrate at a third level (VB) lower than the first voltage (VS).</p> |
