| 摘要 |
The invention relates to an immersed type photovoltaic detector comprising a substrate transparent to infrared radiations and a wafer in semiconducting material. A PN junction is formed in the wafer, on the side opposite the substrate, with a zone of conductivity opposite that of the rest of the wafer. The substrate, on the side opposite the wafer, has the form of a hemispherical lens. The substrate and the wafer are welded by a layer of tellurium transparent to infrared radiations after dissolution by the tellurium of the substrate and of the wafer. The detector is advantageously used for the evaluation of lenses. |
