发明名称 |
Current dump circuit for bipolar random access memories |
摘要 |
Circuitry for rapidly discharging a row of RAM cells upon deselection of the word line. The word line switching transistor collector current is sensed and corresponding voltage level signals are applied to a second switching transistor between the bottom word line of the memory row and a large dump current source. The emitter of the second switching transistor is clamped at a level that will permit the switching transistor to turn on only when there is no emitter current through the word line switching transistor to thereby rapidly discharge the capacitive row of memory cells and therefore improve the operating speed of the memory.
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申请公布号 |
US4477885(A) |
申请公布日期 |
1984.10.16 |
申请号 |
US19820340145 |
申请日期 |
1982.01.18 |
申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORPORATION |
发明人 |
SHARP, KENNETH P. |
分类号 |
G11C11/414;G11C11/415;(IPC1-7):G11C7/02;G11C8/00 |
主分类号 |
G11C11/414 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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