| 摘要 |
<p>PHN 9829 7 An undoped polycrystalline silicon layer is provided on an electrically insulating layer at the surface of a semiconductor body and a metal layer, for example of molybdenum, is provided on the silicon layer. After heating to convert part of the silicon layer into a metal silicide layer a dopant, for example phosphorus, is introduced into the polycrystalline layer through the silicide layer. This method can be used to make an insulated gate field effect device where the gate comprises a double layer structure of metal silicide on polycrystalline silicon.</p> |
