| 摘要 |
PURPOSE:To obtain a device, wherein continuous shift of a light emitting point over a suficiently large distance can be performed with high control accuracy and sufficient miniaturization can be implemented, by sequentially laminating specified first and second clad layers and current paths in grooves provided on the surface of a semiconductor layer. CONSTITUTION:In the case of a GaAs/AlGaAs semiconductor, e.g., two strip shaped protruded parts 21' and 21'' are formed on the substrate 21. On this substrate 21, first clad layer 22 comprising N-AlGaAs including N type inpurities, an active layer 23 comprising P- or N-GaAs, a second clad layer 24 comprising P-AlGaAs including P type inpurities, and a cap layer 25 comprising N-GaAs including N type inpurities are sequentially formed. Then Zn is diffused from the surface of the cap layer 25 in parallel with the strip shaped protruded parts, and a strip shaped P type diffused region 261 is formed in the second clad layer. Finally, a positive electrode 262 comprising three layer of Ti/ Pt/ Au and an Au layer is formed on the entire surface of the cap layer 25, and a negative electrode 27 comprising double layers of Cr/Au and an Au layer is formed on the back surface of the substrate 21. Thus a semiconductor laser is obtained. |
