| 摘要 |
PURPOSE:To control etching speed and obtain a required etching pattern by a method wherein hydrogen ions are accelerated and implanted into a portion of silicon or silicon compound beforehand and, after a mask pattern is formed, dry-etching is performed. CONSTITUTION:A silicon substrate 10 on which a thermal oxide film 11 is formed is prepared and a silicon nitride film 22 is formed on the thermal oxide film 11 by CVD. Hydrogen ions 26 are accelerated and implanted into the silicon nitride film 22. A resist pattern (may be a metal film) 13 is formed by photolithography and the silicon nitride film 22 is etched by CF4/O2 gas 27 excited by high frequency using the resist pattern 13 as a mask. The conditions of etching are, for instance, a gas pressure: P(CF4)=16Pa(O2)=37Pa, a microwave power: 600W and an equipment: an isolated discharge room type chemical dry-ethcing equipment. |
