| 摘要 |
PURPOSE:To prevent the generation of dust due to the exfoliation or breaking of a polysilicon layer on the manufacture of a high dielectric resistance IC by shaving off a single crystal silicon layer until an insulating film between hillock- shaped sections is removed and forming a protective film to the surface of a polycrystalline silicon layer. CONSTITUTION:For prevent the exfoliation of polysilicon in a polysilicon layer 4, a Ti3N4 film 5 as a protective film is formed on the polysilicon layer 4 and further an Si3N4 film 5a also on the reverse side to the Si3N4 film 5 as required. The Si3N4 film 5a displays an effect in order to obviate the generation of dust because it coats a polysilicon surface 4a exposed between the hillock- shaped sections 2a of single crystal silicon. The Si3N4 films 5, 5a are formed after polysilicon is grown and a substrate is shaped through a polishing. Accordingly, the polysilicon layer 4 as a generating source for dust is not exposed to the outside. |
