| 摘要 |
PURPOSE:To form a silicon gate type MOS semiconductor device having a wiring which crosses with a polysilicon wiring without newly adding a process by a method wherein the part located under the oxide film of the cross-wiring is formed by performing an ion-implantation before the formation of the oxide film. CONSTITUTION:A p<-> type well 8 is formed on the region II of an n<--> type silicon substrate 1, ions are implanted, a heat treatment is performed, and a field oxide film 16, oxide films 17 and 18, p type diffusion layers 19 and 20, and n type diffusion layers 21 and 22 are formed. A gate oxide film 23 is formed, polysilicon gates 24 and 25, and polysilicon wirings 26 and 27 are formed, p<+> type source and drain 29 and a p<+> type wiring 30 are selectively formed using a mask, and an n<+> type source and drain 32 and an n<+> type wiring 33 are formed on the region II. A p-channel MOSFETQ1 is composed of a gate oxice film 23, a polysilicon gate 24 and a p<+> type source and drain 29, and a cross-wiring X1 is composed of a p<+> type diffusion layer 20 and a polysilicon wiring 26 which crosses with a p<+> type wiring 30 through the intermediary of an oxide film 17. |
