| 摘要 |
PURPOSE:To obtain a compound semiconductor, impurity concentration thereof is high and uniform, by providing a fringe section with a radiator fin and a lower section with a pipe feeding a gas for forced-air cooling to the central section of a substrate in a susceptor supporting the substrate on which a crystalline film consisting of the semiconductor is grown. CONSTITUTION:The peripheral section of a susceptor 12 is provided with a radiator fin 12a made of a metal such as alumina and the lower central section of the susceptor with 12b for air-cooling by hydrogen gas. A quartz pipe 12c is disposed into the pipe 12b, and H2 gas is fed into the pipe 12b in the direction shown in the arrow III, and discharged in the direction of the arrow IV from the quartz pipe 12c. A pan 12d is arranged to the quartz pipe 12c so as to be positioned at approximately the center of the recessed section of the susceptor in order to adjust the flow of H2 gas into the main body of the susceptor 12. A reaction gas reacting with H2 gas as a carrier is fed from a gas inlet 14 as shown in the arrow V. |
