| 摘要 |
PURPOSE:To settle problems, such as the warpage of a wafer, the generation of dust, etc. by providing processes in which a film on the surface in films grown on both surfaces of the wafer is patterned through reactive ion etching and the film on the back is removed through plasma etching. CONSTITUTION:A wafer 5, the surface thereof is patterned by RIE, is positioned at a position shown in a dotted line on an electrode 12. Vertically movable pins 18, 18 are driven to move the wafer 5 to a position shown in a solid line on an electrode 13. A discharge port 19 connected to a pump is formed, and the wafer 5 is sucked onto the electrode 13 under vacuum. A film on the back of the wafer 5 is removed completely through plasma etching in place of RIE in a chamber 11. Accordingly, the chamber may be kept at the degree of vacuum of approximately 10<-1>-10Torr, and a vacuum suction to the electrode 13 of the wafer 5 is enabled by the degree of vacuum to such an extent. |
