| 摘要 |
PURPOSE:To obtain the titled device which can be increased in density, having less leakage, less influence by alpha rays, further excellent in with stand voltage, and enabling a sufficient capacitance, and whose process can be simplified, by making a capacitor as a buried type dielectric condenser. CONSTITUTION:The surface of a substrate is exposed by opening an angular hole of a side F in an oxide film 2, and then a thin oxide film 3 is formed by oxidizing the substrate again. Next, the angular hole is filled with N type polycrystalline Si and thereafter single-crystallized, thus forming an Si semiconductor layer 4 of an SOI structure. A thin gate oxide film 5 is formed by gate-oxidizing the entire surface of the N type semiconductor layer 4 in the angular hole, polycrystalline Si is laminated thereon, and patterning is performed so that this layer rides on the field oxide film 2 and the semiconductor layer 4 by /2, respectively. The conductivity is increased by doping a gate electrode 6 of the width F formed in such a manner with an N type impurity, and the surface is oxidized into an insulation film 11. Thereafter, an aluminum wiring 9 of the width F is formed in the direction rectangularly intersecting said electrode 6. |
