| 摘要 |
PURPOSE:To improve the high speed operation of a transistor by forming a P type semiconductor thin layer and an N type semiconductor layer on a source region of a high electron mobility transistor, thereby preventing the secondary electron gas of the unnecessary region and generating high speed electrons. CONSTITUTION:After Au-Ge/Au double layer 14 is formed, a resist film 13 is removed, a source electrode 8 and a drain electrode 9 are formed, then alloyed. Then, the film 13 is removed, and a photoresist film 17 is newly formed, the film 17 is removed form the gate region, a resist mask is then formed, a dry etching method with mixture gas of the same amounts of CCl2F2 and He is used to remove an n type GaAs layer 11 and a P type GaAs layer 10 from the gate region, and a hole 18 is opened. Then, the film 17 is removed, and a photoresist film 19 is newly formed on the entire surface, the film 19 is removed from the hole 18, an aluminum film 20 is formed, and the film 19 is removed, and a gate electrode 7 is then obtained. |
