| 摘要 |
PURPOSE:To facilitate the accurate formation of more than two patterns securely and simplify the manufacture by a method wherein the processes by which the 1st photoresist layer, an inorganic material layer and the 2nd photoresist layer are formed and the process by which ion-implantation is performed utilizing the 1st and the 2nd resist layers as a mask are provided. CONSTITUTION:The exposure development process is applied to the 2nd photoresist layer 6 to form a pattern which covers the 2nd aperture 4 in the 1st photoresist layer 2 but does not cover the 1st aperture 3. In other words, the 3rd aperture 7 is formed in the part of the 2nd photoresist layer 6 corresponding to the 2nd aperture 3 only. In this case, the aperture 7 should not be so large as to reach the aperture 4 but can be sufficiently larger than the aperture 3. Therefore, the accuracy required to form this pattern may be relatively low. Then the 2nd conductive type impurity ions are implanted into the semiconductor substrate 1 utilizing the 1st and the 2nd photoresist layers 2 and 6 as a mask, in other words through the 3rd and the 1st apertures 7 and 3, and piercing through an oxide layer 5. Thus an impurity introducing domain 8 with the 1st pattern is formed. |
