发明名称 Magnetoresistive element
摘要 The invention provides a magnetoresistive element which magnetostatically has magnetic anisotropy to control a domain structure and which eliminates Barkhousen noise that will cause abrupt movement of domain walls and irregular magnetization due to a change in the signal magnetic field, wherein a grating pattern is formed on at least one surface of a magnetoresistive film by a process in which a grating pattern is unidirectionally formed on the surface of a substrate and the magnetoresistive film of a ferromagnetic body is deposited thereon. Further, various magnetoresistive elements to which a novel bias method is applied are provided.
申请公布号 US4477794(A) 申请公布日期 1984.10.16
申请号 US19820406894 申请日期 1982.08.10
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NOMURA, NOBORU;KANAI, KENJI;KAMINAKA, NOBUYUKI;OMATA, YUJI
分类号 G11B5/39;H01L43/08;(IPC1-7):G11B5/30 主分类号 G11B5/39
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