发明名称 |
Fast MOS driver stage for digital signals |
摘要 |
A fast MOS driver circuit for digital signals having a small current consumption and a good signal-to-noise ratio comprises an output inverter, a pre-inverter and of an enhancement-type transistor having its source-drain path connected in parallel to that of the load transistor of the output inverter (IA). The gate of the enhancement-type transistor and the gates of the load transistors of the output and pre-inverters are coupled to the output of the pre-inverter. The W/L-ratio of the enhancement-type transistor is almost the same as that of the switching transistor of the output inverter. The gates of the switching transistors are connected to one another. The load transistors are of the depletion type while the switching transistors are of the enhancement type. An embodiment is disclosed employing the above circuit and an additional pre-inverter circuit arrangement operating on a two-phase ratio technique controlled by a two-phase clock signal to match capacitances greater than that matched by the above circuit.
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申请公布号 |
US4477735(A) |
申请公布日期 |
1984.10.16 |
申请号 |
US19810330749 |
申请日期 |
1981.12.14 |
申请人 |
ITT INDUSTRIES, INC. |
发明人 |
GOLLINGER, WOLFGANG;MLYNEK, DANIEL |
分类号 |
H03K5/02;H03K19/017;(IPC1-7):H03K3/01;H03K17/04;H03K17/69 |
主分类号 |
H03K5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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